| 摘要 |
PROBLEM TO BE SOLVED: To provide substrate treatment equipment which can prevent metal contamination. SOLUTION: An annealing apparatus 10 comprises a silicon carbide-made process tube 31 which forms a treatment chamber 33 for treating a wafer 1, a heater unit 30 for heating the wafer 1 in the treatment chamber 33 to 1,200°C or above, a manifold 40 arranged below the process tube 31, and a metallic seal cap 51 for blocking a furnace port 41 of the manifold 40. The manifold 40 is formed of an opaque quartz, and a presser ring 36 for fixing the manifold 40 is formed with a cooling water channel 37. In the seal cap 51, a cooling water channel 52 is formed, and the top face of the seal cap 51 is covered by a quartz cover 53. On the mating face of the manifold 40 with the process tube 31, a gas circulation groove 43 for sealing and a groove 46 for evacuation are concentrically formed with the groove 43 on the inside and the groove 46 on the outside. COPYRIGHT: (C)2005,JPO&NCIPI
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