| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, in which bumps with minute top diameter and sufficient height is formed on a terminal pad of the semiconductor substrate at a low cost in simple steps. SOLUTION: In the manufacturing method, a stud bump 4 is welded on a terminal pad 2 of a semiconductor substrate 1 by pressure from a gold ball 15 in a discharge method, and the stud bump 4 is covered with plating resist 5 formed on the semiconductor substrate 1. An opening 17 is formed at an upper face of the stud bump 5, and an Ni platting layer 6 is formed at the opening 17 in an electroless plating method, and a gold plating layer 7 is formed on the Ni plating layer 6 in flash plating. The plating resist 5 is removed by flaking, and a plating bump 8 with minute diameter is formed at a top of the stud bump 4 is formed above the terminal pad 2 of the semiconductor substrate 1, and thereby a projected bump 20 with also a sufficient height is formed. A semiconductor device with stable high-pitch mounting on each connection pad at minute pitch can be manufactured at a low cost, in simple steps without using a sputtering system. |
