发明名称 |
Capacity dividable memory IC |
摘要 |
Two memory areas on a wafer are coupled through pass transistors to double the memory capacity of each area and can be sawed to yield two memory chips each with single memory area. A pair of pass transistors are used to couple each dedicated functional pad in both memory areas, when the pass transistors are turned on. The connection between the pass transistor pair can be sawed through to yield single capacity memory dice. The memory capacity can be further increased by coupling more memory areas together with pass transistors.
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申请公布号 |
US7190604(B2) |
申请公布日期 |
2007.03.13 |
申请号 |
US20050166586 |
申请日期 |
2005.06.27 |
申请人 |
LYONTEK INC. |
发明人 |
HUNG CHI-CHENG;CHANG LING-YUEH;CHUNG PWU-YUEH |
分类号 |
G11C5/06;G11C8/00;G11C11/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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