发明名称 VARIABLE RESISTANCE ELEMENT AND RESISTANCE VARIABLE TYPE MEMORY DEVICE
摘要 A variable resistance element includes: a first electrode; a resistance layer formed on the first electrode; and a second electrode formed on the resistance layer, wherein the resistance layer is composed of transition metal oxide having oxygen defects.
申请公布号 US2008048165(A1) 申请公布日期 2008.02.28
申请号 US20070781315 申请日期 2007.07.23
申请人 SEIKO EPSON CORPORATION 发明人 MIYAZAWA HIROMU
分类号 H01L45/00 主分类号 H01L45/00
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