| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon electrode plate for a plasma etching device for use in the manufacture of a semiconductor device, with which the quantity of particles generated can be surely reduced. SOLUTION: A silicon electrode plate, used as an upper electrode in a plasma etching device, is immersed in a solution (secco solution) containing K2Cr2O7(5%): HF (50%)=1:2 for 3 minutes. At this time, this silicon electrode plate for plasma etching has pits having a diameter of 5 μm or larger at a density of 5/mm2 or lower appearing on surface. The specific resistance of the silicon electrode plate material is preferably between 1 Ωcm and 50 Ωcm inclusive. As the material, one from among polyethylene, polypropylene and polyethylene terephthalate is used to prevent contamination from a packaging bag and/or packaging case. In this case, the volume resistivity value of the packaging bag and/or packaging case is preferably in the range of 1×104-9×1018 Ωcm. |
