| 摘要 |
PROBLEM TO BE SOLVED: To provide a photovoltaic device which is capable of generating a large current, manufactured at a high deposition speed, comparatively small in thickness, high in conversion efficiency, manufactured at a low temperature and at a low cost, and excellent in productivity. SOLUTION: This photovoltaic device is equipped with a structure composed of a first semiconductor layer 4A, which contains no crystals, a second semiconductor layer 4B which contains nearly spherical fine crystals, and a third semiconductor layer 4C which contains columnar fine crystals that are laminated in this sequence, where the second semiconductor layer 4B starts making its fine spherical crystals become gradually larger in average diameter from its contacting surface with the first semiconductor layer 4A toward the third semiconductor layer 4C. |
