发明名称 METHOD FOR PULLING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for pulling a single crystal which is capable of automatically aligning precisely a crystal axis and a crucible axis, suppressing swinging of a growing single crystal and manufacturing a single crystal with high productivity. SOLUTION: In a method for pulling a single crystal using the Czochralski method, at least when the crown or the straight trunk portion of a single crystal is grown, axis-centering to settle the centering position of the crystal is done in applying a magnetic field to a raw material solution and swinging is settled by transferring a wire in a horizontal plane in case swinging of the wire occurs up to a predetermined amplitude or more in growing the single crystal. As a method for adjusting axis centers, the position of the wire 12 is detected by a laser sensor 14 and the crucible axis center information memorized in a RAM beforehand and the wire axis center (crystal axis center) information are compared and the crystal axis center and the crucible axis center are aligned by moving the XY table of a XY table system 10 equipped with a center aligning function through a controller 16 by a servomechanism in case the crystal axis center is off the crucible axis center. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008308347(A) 申请公布日期 2008.12.25
申请号 JP20070155270 申请日期 2007.06.12
申请人 COVALENT MATERIALS CORP 发明人 HISAICHI TOSHIO
分类号 C30B15/20;C30B15/30 主分类号 C30B15/20
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