| 摘要 |
Since parallel MOSFETs are usually driven with one gate signal in power applications, the current sharing between the MOSFETs is automatically established with regard to the characteristics of the individual MOSFETs. This may lead to a large non-uniformity of the current distribution between the MOSFETs. According to the present invention, an individual control of the on-resistances of the MOSFETs is provided, which allows for an improved current sharing between paralleled MOSFETs.
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