Semiconducting structure with switchable emission zones, method of manufacturing such a structure and semiconducting device comprising such a structure

摘要

The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region (10) with a first type of conductivity, and a second semiconducting region (20) with a second type of conductivity, at least on a portion (220, 210), so as to form a junction semiconducting with the first region (10). This second region (20) has at least a first portion (210) in contact with the first region (10), this first portion (210) comprising at least one first and one second carrier confinement zone (211, 212). The structure (1) comprises at least a first means of polarizing the first portion (210) adapted to apply direct first external polarization to the first portion (210) in order to modify the distribution of carriers of at least one type of conductivity in the first portion (210) relative to the first and second confinement zones (211, 212). The invention also relates to a method of manufacturing a semiconducting structure (1) and a device comprising at least such a structure (1).

主权项

1. A semiconducting structure intended to emit light, comprising:
a first semiconducting region with a first type of conductivity, a second semiconducting region comprising at least a first portion, wherein the second semiconducting region comprises at least a portion of the second type of conductivity which is either the first portion itself or a second portion of the second semiconducting region, so as to form a semiconducting junction with the first semiconducting region, the first portion being in contact with the first semiconducting region, wherein the first portion extends at least partially along the semiconducting junction, this first portion comprising at least a first and a second carrier confinement zone for at least one type of carrier, wherein the semiconducting structure comprises at least a first means of polarisation of the first portion adapted to apply direct first external polarisation to the first portion in order to modify the distribution of carriers of at least one type of conductivity in the first portion relative to the first and the second confinement zones and to select the confinement zone(s) in which light emission takes place, the first and second confinement zones having different band gap widths.