发明名称 |
Semiconductor structure and method for manufacturing the same |
摘要 |
A semiconductor structure is disclosed. The semiconductor structure comprises: a substrate (130), a support structure (131), a base region (100), a gate stack, a spacer (240), and a source/drain region, wherein the gate stack is located on the base region (100), and the base region (100) is supported on the substrate (130) by the support structure (131), wherein the sidewall cross-section of the support structure (131) is in a shape of a concave curve; an isolation structure (123) is formed beneath the edges on both sides of the base region (100), wherein a portion of the isolation structure (123) is connected to the substrate (130); a cavity (112) is formed between the isolation structure (123) and the support structure (131); and there exists a source/drain region at least on both sides of the base region (100) and the isolation structure (123). Accordingly, a method for manufacturing the semiconductor structure is also disclosed. |
申请公布号 |
US9401425(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201214437755 |
申请日期 |
2012.11.27 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
Zhu Huilong;Yin Haizhou;Luo Zhijiong |
分类号 |
H01L29/78;H01L29/10;H01L21/8234;H01L29/66;H01L29/06;H01L21/02;H01L21/306;H01L21/308;H01L21/762;H01L29/16;H01L29/161;H01L29/165 |
主分类号 |
H01L29/78 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Pua Paul M. H.;Foley & Lardner LLP |
主权项 |
1. A semiconductor structure, comprising a substrate (130), a support structure (131), a base region (100), a gate stack, a spacer (240) and a source/drain region, wherein the gate stack is located on the base region (100), and the base region (100) is supported on the substrate (130) by the support structure (131), wherein:
the sidewall cross-section of the support structure (131) is in a shape of concave curve; an isolation structure (123) is formed below edges on both sides of the base region (100), wherein part of the isolation structure (123) is connected to the substrate (130); a cavity (112) is formed between the isolation structure (123) and the support structure (131); and a source/drain region is formed at least on both sides of the base region (100) and the isolation structure (123). |
地址 |
Beijing CN |