| 摘要 |
PURPOSE: Provided is a structure in which a TFT is protected from light entering from outside in order to reduce an off-current of the TFT. CONSTITUTION: A semiconductor device comprises a substrate(11), a first layer formed over the substrate, a second layer formed over the substrate, and a plurality of thin film transistors located over the first layer. The thin film transistor comprises a semiconductor film, a gate insulating film(19) adjacent to the semiconductor film and a gate electrode(20) adjacent to the gate insulating film. The semiconductor film comprises a source region(22), a drain region(24) and a channel region(23). The first layer shields the channel region against light and the second layer comprises at least one of oxygen and nitrogen. The second layer is not overlapped with the first layer.
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