摘要 |
The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4,R5, and R6 are independent of each other hydrogen,an alkyl group,or a trialkylsilyl group, n isan integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4. |
申请人 |
BASF SE |
发明人 |
XU, KE;SCHILDKNECHT, CHRISTIAN;SPIELMANN, JAN;FRANK, JÜRGEN;BLASBERG, FLORIAN;GÄRTNER, MARTIN;LÖFFLER, DANIEL;WEIGUNY, SABINE;SCHIERLE-ARNDT, KERSTIN;FEDERSEL, KATHARINA;ABELS, FALKO |