| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory and its redundant relieving method which can perform a test of a pseudo relieving state being equivalent to a state after successive redundant relieving by feeding back a result of a probe test, in a probe test process before redundant relieving. SOLUTION: This device is a redundant relieving circuit section included in a DRAM, and comprises a memory cell array 1 consisting of plural memory cells, a relieving circuit 2 for replacing a defective line selecting an arbitrary memory cell in this memory cell array 1 by a redundant line and the like. The relieving circuit 2 a fault position indicating circuit 11 indicating a fault position based on a test result of the memory cell array 1, a pseudo relieving information circuit 12 making pseudo relieving information based on this information, a selecting circuit 13 supplying this information to the memory array 1 and performing a pseudo relieving state being a state after redundant, relieving, a fuse circuit 14 for replacing a defective line corresponding to a fault position by a redundant line based on pseudo relieving information, and the like. |
