PROCEDE DE FABRICATION D'UN TRANSISTOR

摘要

The method involves forming an initial insulating layer (114) on both sides of a stack of grid of cavities (440) by etching an active layer. A continuous insulating layer (118) is formed by forming an insulating film on exposed surfaces of an initial substrate (112) such that the film forms a continuous insulating layer of the cavities with the first insulating layer. Side ends of a channel (180) formed by a portion of the active layer is exposed, and the cavities are filled by a semiconductor material through epitaxy from the side ends to form a source and the drain.