| 摘要 |
PURPOSE:To make steps on a semiconductor substrate smooth, simply and securely without employing a dummy pattern by a method wherein a positive type photoresist is applied on an uneven surface of the semiconductor substrate and Wagner-Meerwein rearrangement is created and the substrate is subjected to heat treatment and whole surface is etched with a uniform etching rate. CONSTITUTION:A layer insulation film 3 is formed so as to cover Al wirings 1. The unevenness of the layer insulation film 3 is covered with a positive type novolak resin system resist 4 by spinning coating. UV rays of 350mj-450mm wavelength, for instance, are applied to the resist 4 with an intensity of about 300mg/cm<2> to create Wagner-Meerwein rearrangement and then the substrate 2 is subjected to heat treatment at the temperature of 150 deg.C-200 deg.C for 30-600min to make the surface smooth. Then the layer insula tion film 3 is etched as far as the protruded parts disappear by reactive ion etching 6 under such condition that the etching rate of the resist 4 is the same as that of the layer insulation film 3 (for instance in an atmosphere of CHF3+O2 gas). |
