发明名称 X-RAY MASK
摘要 <p>PURPOSE:To obtain an X-ray mask having an X-ray transmission layer in which an optimum stress is provided and characteristics are not varied in age even by irradiating an X-ray by forming the layer of a titanium implanted layer in which titanium ions are implanted to a mask support layer made of a thin silicon film. CONSTITUTION:A mask support 2 made of a thin silicon film, an X-ray transmission layer 3 formed on the support 2, and an X-ray absorption layer 4 laminated on the layer 3 and formed in a pattern are provided, and the layer 4 is formed of a titanium implanted layer in which titanium ions are implanted to the support 2. For example, the layer 3 made of the titanium implanted layer is formed by implanting titanium ions in concentration of 8X10<15> ions/cm<2> at 50kV on the surface of the support 2. Then, the layer made of a thin tungsten film is laminated, etched with the pattern of an electron beam resist layer as a mask by reactive ion etching to form a pattern 4a of the layer 4.</p>
申请公布号 JPH02307209(A) 申请公布日期 1990.12.20
申请号 JP19890129753 申请日期 1989.05.22
申请人 MATSUSHITA ELECTRON CORP 发明人 NIKAWA HIDEO
分类号 G03F1/22;H01L21/027 主分类号 G03F1/22
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