CMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A CMOS(Complementary Metal Oxide Silicon) device and a fabrication method thereof are provided to removing a cause of a latch-up generation by forming a PMOS on a NMOS after forming the NMOS on a substrate. CONSTITUTION: An NMOS(N channel Metal Oxide Silicon) and a PMOS(P channel Metal Oxide Silicon) device are formed on a substrate(11) having a well sequentially. The NMOS device is composed of a gate electrode(15) and N+ region(16) for a source/drain on both side of the gate electrode. The PMOS device is composed of a gate electrode(25) formed between the NMOS device and an interlayer dielectric, and P+ region(26) for a source/drain on both side of the gate electrode. The P+ region for the source/drain of the PMOS is formed by implanting a P type impurity on an N type polysilicon layer.