METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to improve a step coverage and to prevent a bowing of an SOG(Spin On Glass) by forming a via contact hole having a positive slope without using a wet etching. CONSTITUTION: After forming a lower metal film(12) on a semiconductor substrate(11), a first insulating layer(13) and an SOG film(14) are sequentially formed. A first via contact hole(17A) is formed by dry etching the SOG film(14) and the first insulating layer(13) using a first photoresist pattern(21) as a mask. The first photoresist pattern(21) is removed by oxygen plasma and the SOG film(14) is partially etched by increasing an exposure time of the oxygen plasma, thereby forming a second via contact hole(17B) having wider diameter compared to the first via contact hole. A second insulating layer(15) is formed on the resultant structure. A via contact hole(17) is formed by etching the second insulating layer(15) using a second photoresist pattern(22) as a mask. After removing the second photoresist pattern(22), an upper metal film(18) is formed on the resultant structure.