A method of forming a semiconductor device

摘要

The method comprises providing a substrate 13 or a semiconductor layer with a surface which reveals a plurality of regions having different crystal planes 11, 12 in different crystal orientations and forming on the surface a semiconductor layer having a plurality of regions 15, 16 of different alloy composition corresponding to the crystal planes 11, 12. As shown, three layers of GaAs AlGaAs or InGaAs are grown on each of the crystal planes. The semiconductor device formed by the method may be a broad band L.E.D. optical source, a laser, a waveguide structure, an optical detector or an optoelectronic integrated circuit.