| 摘要 |
<p>A vertical power MOSFET (700), includes an N+ substrate (714) and an overlying N-epitaxial layer (704). An N-type buried layer (720) is formed in the epitaxial layer and overlaps the substrate, the buried layer having a dopant concentration which is greater than the dopant concentration of the epitaxial layer, but less than the dopant concentration of the substrate. The distance between the top edge of the buried layer and a drain-body junction of the MOSFET allows the breakdown voltage and on resistance of the MOSFET to be determined substantially without regard to the thickness of the epitaxial layer.</p> |
