发明名称 |
Erzeugung von Mustern und Herstellungsverfahren für Halbleiteranordnungen mit diesem Muster |
摘要 |
A process for forming an etching pattern, which comprises selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having etching resistance at a photo-irradiated portion of the surface, and then subjecting a unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation. <IMAGE> <IMAGE> |
申请公布号 |
DE69132523(D1) |
申请公布日期 |
2001.03.08 |
申请号 |
DE1991632523 |
申请日期 |
1991.05.08 |
申请人 |
CANON K.K., TOKIO/TOKYO |
发明人 |
YAGI, TAKAYUKI;KOMATSU, TOSHIYUKI;SATO, YASUE;KAWATE, SHINICHI |
分类号 |
G03F1/68;G03F7/16;G03F7/20;H01L21/308;H01L21/311;H01L21/3213 |
主分类号 |
G03F1/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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