发明名称 Erzeugung von Mustern und Herstellungsverfahren für Halbleiteranordnungen mit diesem Muster
摘要 A process for forming an etching pattern, which comprises selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having etching resistance at a photo-irradiated portion of the surface, and then subjecting a unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation. <IMAGE> <IMAGE>
申请公布号 DE69132523(D1) 申请公布日期 2001.03.08
申请号 DE1991632523 申请日期 1991.05.08
申请人 CANON K.K., TOKIO/TOKYO 发明人 YAGI, TAKAYUKI;KOMATSU, TOSHIYUKI;SATO, YASUE;KAWATE, SHINICHI
分类号 G03F1/68;G03F7/16;G03F7/20;H01L21/308;H01L21/311;H01L21/3213 主分类号 G03F1/68
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