发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To take out light from a substrate side by emitting light with an arbitrary chromaticity (chroma and hue) with a single pixel. SOLUTION: A first light-emitting layer 3 and a second light-emitting layer 9 for emitting light with different chromaticity are formed on a substrate 1, and the first light-emitting layer 3 forms a multiple quantum-well structure. By changing each crystal ratio of the first light-emitting layer 3 and the second light-emitting layer 9, a forbidden bandwidth is changed, so that the peak wavelength for emitting light can be displaced according to a crystal ratio. The wavelength intensity characteristics of synthetic light for emitting light from the light-emitting layers 3 and 9 are set to desired characteristics, thus emitting light with an arbitrary chromaticity from a single pixel. Also, a buffer layer 6 is provided between the first light-emitting layer 3 and the second light- emitting layer 9, enhancing the light take-out efficiency from the side of the substrate 1, the since light emitted from the first light-emitting layer 3 toward the side of an electrode 14 is reflected to the side of the substrate 1 by the buffer layer 6.
申请公布号 JPH10144961(A) 申请公布日期 1998.05.29
申请号 JP19960310173 申请日期 1996.11.05
申请人 TOYODA GOSEI CO LTD;TOYOTA CENTRAL RES & DEV LAB INC 发明人 KOIDE NORIKATSU;KOIKE MASAYOSHI;UMEZAKI JUNICHI;WAKIGUCHI MITSUO;ASAMI SHINYA;ITO KENJI;KACHI TORU;TOMITA KAZUYOSHI;OZAWA TAKAHIRO
分类号 H01L33/06;H01L33/10;H01L33/12;H01L33/32;H01L33/40 主分类号 H01L33/06
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