| 摘要 |
PROBLEM TO BE SOLVED: To contrive enhancement of reliability of the element of a flash memory cell and enhancement of operating characteristics of the element. SOLUTION: The manufacturing method of a semiconductor storage device comprises a process for forming a silicon thermal oxide film 102 on an Si substrate 101, a process for forming a silicon nitride film 103 on the film 102, a process for forming grooves 104, through which the substrate 101 is exposed, in a scheduled element formation region, a process for forming single crystal silicon films 105 on the Si substrate 101 at the bottoms of the grooves 104 by an external growth method, a process for forming tunnel thermal oxide films 106 on the surfaces of the films 105, a process for embedding polycrystalline silicon films 107 in the grooves 104, a process for selectively removing the film 103, a process for forming gate-source insulating films 108 on the surfaces of the films 107 and a process for forming a polycrystalline silicon film 109 used as a control gate on the films 108.
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