发明名称 Memory device
摘要 A memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; and (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer containing at least one polymer with variable electrical conductivity; and (e) at least one passive layer comprised of a material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.
申请公布号 US6806526(B2) 申请公布日期 2004.10.19
申请号 US20020304863 申请日期 2002.11.27
申请人 ADVANCED MICRO DEVICES, INC. 发明人 KRIEGER JURI H.;YUDANOV NIKOLAI
分类号 G11C11/34;G11C11/56;G11C13/02;H01L27/28;H01L51/00;H01L51/30;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 G11C11/34
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