发明名称 |
Dynamic random access memory structure |
摘要 |
A dynamic random access memory structure. The structure includes a substrate having protruding sections and recessed sections, in which the protruding sections have sidewalls and a substrate surface is located between the protruding sections and the recessed sections. A gate oxide layer is formed on the sidewalls of the protruding sections and on the surfaces between the protruding sections and the recessed sections. A doped region is formed near the bottom of each protruding section, and these doped regions serve as buried bit lines. A channel region is formed in the protruding section and a gate electrode is formed on each side of the channel region. A storage electrode is connected to the other end of the protruding section and a word line is connected to the gate electrode. The word line and the buried bit line are perpendicular to each other.
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申请公布号 |
US6204528(B1) |
申请公布日期 |
2001.03.20 |
申请号 |
US20000478328 |
申请日期 |
2000.01.06 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LEE ROBIN |
分类号 |
H01L21/8242;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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