| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve pattern size accuracy by suppressing generation of fault in resist pattern resulting from residual drops of liquid and localization of bubbles on the occasion of liquid immersion exposure. <P>SOLUTION: In the liquid immersion exposure method, a resist pattern formed of a resist film is formed by conducting liquid immersion exposure while moving a substrate 10 to be processed and a mask 32 for exposure relatively and also conducting multiple exposure to an exposing region of the area near the external circumference on the front surface of the substrate 10 to be processed under the state that the liquid is provided between a resist layer on the substrate 10 to be processed and an optical system 33 of the exposure apparatus after a resist film or a resist layer formed of the resist film and the liquid immersion protecting film formed on the resist film is formed on the substrate 10 to be processed, and moreover conducting exposure in the number of times less than multiple times to a region at the inner side, and then conducting the developing process to the exposed substrate 10. <P>COPYRIGHT: (C)2008,JPO&INPIT |
