| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve dimensional accuracy of a gate pattern of a semiconductor device. <P>SOLUTION: When a predetermined pattern including a plurality of gate patterns is formed, patterns are sorted into fine gate patterns and the other patterns (S102), and a hard mask film is formed on a workpiece film (S106). Continuously, a first resist film having a fine first pattern is formed on the hard mask film for patterning of the hard mask film (S108). Then a resist film having another pattern is formed on the hard mask film, and the workpiece film is selectively dry-etched with the hard mask film and the resist film as masks (S110 and S112). <P>COPYRIGHT: (C)2008,JPO&INPIT |
