发明名称 |
Semiconductor memory device capable of reading and writing data at the same time |
摘要 |
A semiconductor memory device includes a plurality of banks. A data path may be divided into a read data path and a write data path, therefore, parallel processing of write and read commands are possible. The semiconductor memory device may include an address bank buffer, address buffer, column predecoder and/or a decoder. The semiconductor memory device may begin execution of a write command in a bank in one clock cycle and begin execution of a read command in the following clock cycle, therefore, bus efficiency is increased and/or write-to-read turn around time is reduced.
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申请公布号 |
US7366822(B2) |
申请公布日期 |
2008.04.29 |
申请号 |
US20040840268 |
申请日期 |
2004.05.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK JIN-SEOK;JUN YOUNG-HYUN;JANG SEONG-JIN;LEE SANG-BO;PARK MIN-SANG;KIM CHUL-SOO |
分类号 |
G06F12/00;G11C7/10;G11C8/00;G11C11/408 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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