发明名称 Semiconductor Device Having Through Contacts Through a Plastic Housing Composition and Method for the Production Thereof
摘要 The invention relates to a semiconductor device comprising through contacts through a plastic housing composition and a method for the production thereof. For this purpose, the wiring substrate has a solder deposit on which through contact elements are arranged vertically with respect to the wiring substrate and extend as far as the top side of the semiconductor device.
申请公布号 US2008315399(A1) 申请公布日期 2008.12.25
申请号 US20050575851 申请日期 2005.09.20
申请人 INFINEON TECHNOLOGIES AG 发明人 BAUER MICHAEL;BEMMERL THOMAS;FUERGUT EDWARD;JEREBIC SIMON;STUEMPFL CHRISTIAN;THEUSS HORST;VILSMEIER HERMANN
分类号 H01L23/04;H01L21/00 主分类号 H01L23/04
代理机构 代理人
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