| 摘要 |
PROBLEM TO BE SOLVED: To increase the amount of light entering a channel region of a photoelectric conversion semiconductor thin film even if a source electrode and a drain electrode are formed of a light shielding metal. SOLUTION: At least the photoelectric conversion semiconductor thin film is provided under a channel protective film 42. On a top surface of the channel protective film 42, a liner source electrode S and drain electrode D are provided in a mutually parallel relationship. In the photoelectric conversion semiconductor thin film provided under the channel protective film 42, a portion between the source electrode S and drain electrode D forms a channel region not covered with the source electrode S and drain electrode D. Even if the source electrode S and drain electrode D are formed of the light shielding metal, therefore, the amount of light entering the channel region of the photoelectric conversion semiconductor thin film is increased. COPYRIGHT: (C)2009,JPO&INPIT
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