| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacity between a lower electrode of a photosensor, and data. SOLUTION: The photosensor according to the present invention comprises a glass substrate 1, a base insulating film 19 provided on the glass substrate 1 and has a lower dielectric constant than the glass substrate 1, and a switching element formed by stacking a gate electrode 2, a gate insulating film 3, and a semiconductor layer 4 on the base insulating film 19 and having a drain electrode 7 connected to the semiconductor layer 4. The drain electrode 7 has an extension portion in direct contact with a surface of the base insulating film 19. The photosensor further has a photodiode 20 provided on the extension portion of the drain electrode 7. COPYRIGHT: (C)2009,JPO&INPIT
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