SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device small in junction leak current; and its manufacturing method. SOLUTION: This manufacturing method of a semiconductor device is characterized by including processes of: forming an insulation layer on one-side principal surface of a first semiconductor substrate; implanting ions of fluorine into the first semiconductor substrate from the insulation layer side; sticking the insulation layer to a second semiconductor substrate; thereafter converting the first semiconductor into a thin film; forming n-type and p-type semiconductor regions on the other-side principal surface of the first semiconductor substrate converted into the thin film; thereafter diffusing fluorine on a surface of the n-type semiconductor region by using a heat treatment; and forming a p-type MIS transistor in the n-type semiconductor region, and forming an n-type MIS transistor in the p-type semiconductor region. COPYRIGHT: (C)2009,JPO&INPIT