| 摘要 |
PROBLEM TO BE SOLVED: To provide an n-type group II-VI compound semiconductor film enabling an increase in area, and also to provide its manufacturing method. SOLUTION: An n-type group II-VI compound semiconductor film manufacturing method includes a step of eliminating an F element from an F-element containing group II-VI compound semiconductor film by thermal treatment of the F-element containing group II-VI compound semiconductor film containing the F element. The group II element constituting the F-element containing group II-VI compound semiconductor film is Zn, and the group VI element constituting the F-element containing group II-VI compound semiconductor film is at least one kind selected from a group comprising Se and S. The F-element concentration in the F-element containing group II-VI compound semiconductor film is 5 to 20 atm%. COPYRIGHT: (C)2009,JPO&INPIT
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