| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment furnace capable of manufacturing an anneal wafer without degrading productivity and free from cracks on a quartz-made process tube even if a semiconductor substrate is heat-treated in an atmosphere of Ar, hydrogen or their mixture gas. SOLUTION: The heat treatment furnace has the quartz-made process tube for heat-treating at least the semiconductor substrate in an atmosphere of Ar, hydrogen or their mixture gas. The process tube has a process tube body, a gas inlet pipe and a gas exhaust pipe. The heat treatment furnace further includes a detachable cover member fitted from the inside of the body into the gas exhaust pipe. The cover member has a cylinder having an outer diameter smaller than an inner diameter of the gas exhaust pipe and inserted into the gas exhaust pipe, and a flange having an outer diameter extending on one end of the cylinder, which is larger than the inner diameter of the gas exhaust pipe. COPYRIGHT: (C)2009,JPO&INPIT
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