| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern correction method for a semiconductor manufacturing mask, capable of obtaining the satisfactory correction accuracy. SOLUTION: An area where a line part and a contact part overlap each other is extracted (ST.1), a space between the overlapping area and another line part adjacent to the overlapping area, and the line width of the line part are extracted (ST.2), and the dependency between the line width fluctuation of the line part generated after a wafer process and the space is obtained (ST.3), the dependency is divided according to a design grid width and the intersection of the design grid width and the dependency is extracted (ST.4), and the relation is divided according to every intersection block, and a correction rule table for executing the correction of the integral multiple of the design grid width is formed for every intersection block (ST.5), the correction of the integral multiple of the design grid width is executed with reference to the overlapping area based on the correction rule table (ST.6). |
