| 摘要 |
The present invention relates to an oxide semiconductor thin film transistor substrate for a flat panel display, including a light-shielding layer having a light-guiding structure. The thin film transistor substrate according to the present invention includes a substrate, a plurality of pixel regions, a thin film transistor, a light-shielding layer, a buffer layer, and pixel electrodes. The pixel regions are arranged in a matrix form. The thin film transistor is disposed in each of the pixel regions and includes a channel region containing an oxide semiconductor material. The light-shielding layer is interposed between the substrate and the thin film transistor, and wherein a first metal layer having a light-shielding thickness, a high-refractive layer, and a second metal layer having a light-transmitting thickness. The buffer layer is interposed between the light-shielding layer and the thin film transistor, covers the entire surface of the substrate, and is disposed within the pixel region while being connected to the thin film transistor. |
