| 摘要 |
The present invention relates to a controlling apparatus capable of precisely monitoring an ingot of a sapphire single crystal growth apparatus for producing a wafer, which is a main material of an LED substrate, in large quantity, and more specifically, to a monitoring and controlling apparatus for observing a growth of an ingot of a sapphire single crystal growth apparatus using a laser optical image processing method enabling to clearly observe an initial seed position and a growth situation of an ingot which is a sapphire single crystal, at a high temperature more than or equal to 2050°C by putting the ingot, which is a raw material of a wafer, into a heating furnace. The sapphire single crystal growth apparatus configured to put aluminum oxide to a crucible (100) and dissolve the aluminum oxide by heating the same using an electrode (201), and grow a single crystal ingot (102) by making the dissolved aluminum oxide be slowly in contact with a seed (101) and pulling and rotating the aluminum oxide at the same time, comprises: a monitoring unit (300) for observing growth of the ingot (102); and a screen capture real-time filter conversion reproduction device (450) enabling a worker to work while clearly monitoring a scene of growth of the ingot (102) transmitted through the monitoring unit (300). |
