SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor structure which improves the performance of a back side illuminated (BSI) image sensor device as well as reduces the cost and time on processing the BSI image sensor, and to provide a manufacturing method of the semiconductor structure.SOLUTION: A semiconductor structure 100 includes: a semiconductive substrate 101 including a first side 101a and a second side 101b opposite to the first side; a radiation sensing device 101c disposed on the semiconductive substrate; an interlayer dielectric (ILD) 102 disposed over the first side of the semiconductive substrate; and a conductive pad 103 disposed in the semiconductive substrate, passing through the ILD, and configured to couple to an interconnect structure 104a disposed over the ILD. A portion of the conductive pad is surrounded by the semiconductive substrate, and a step height T2 is formed by a surface 103a of the portion of the conductive pad and the second side of the semiconductive substrate.SELECTED DRAWING: Figure 1