| 摘要 |
A semiconductor arrangement for nonreciprocal amplification or for the generation of high frequency oscillations in which high frequency electromagnetic energy is coupled into a semiconductor layer which exhibits a negative differential charge carrier mobility in a direction perpendicular to the applied drift field and has a predetermined layer thickness in this perpendicular direction thereby exciting properly growing space charge waves. The arrangement may be geometrically symmetrical in this perpendicular direction and may have either symmetrical or antisymmetrical coupling and decoupling means for the high frequency electromagnetic energy thereby exciting and removing space charge waves of the symmetrical or antisymmetrical type, respectively.
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