METHOD FOR THE MANUFACTURE OF LIGHT EMITTING AND/OR PHOTODETECTIVE DIODES

摘要

A method for the manufacture of light emitting and/or photodetective diodes, which comprises the following operations: a) providing a semiconductor MgxZnl-xTe substrate, b) treating the substrate to incorporate a doping element therein, c) applying a layer of conductive material to the substrate and treating the applied layer to create a compensated layer having high resistivity in the substrate, d) implanting ions on a first face of the compensated semiconductor substrate with sufficient energy to create two zones therein, a trapping zone in the semiconductor surface having a thickness less than the layer of high resistivity material, and in insulating zone above the trapping zone, e) forming conductive contacts on a second face of the substrate.