发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>SEMICONDUCTOR DEVICE A three-terminal semiconductor device having a switching time in the vicinity of 10-12 seconds and exhibiting a dynamic negative resistance is made up of a thin barrier region in the emitter section having a barrier height that is higher than a wider barrier region in the collector section separated by a base region having a width comparable to the mean-free path length of a majority carrier The device employs quantum mechanical tunneling as the dominant current flow mechanism from the emitter region to the base region and hot majority carrier transfer as the dominant current flow mechanism through the base region to the collector region.</p> |
申请公布号 |
CA1142268(A) |
申请公布日期 |
1983.03.01 |
申请号 |
CA19800367342 |
申请日期 |
1980.12.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEIBLUM, MORDEHAI |
分类号 |
H01L29/205;H01L21/331;H01L29/73;H01L29/76;H01L29/88;(IPC1-7):H01L29/88 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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