| 发明名称 |
CONTROL OF OXIDE LAYER REACTION RATES |
| 摘要 |
A process is described for formation of oxide films independent of thickness from precursor films comprising metals, metal oxides, and metal fluorides with properties and structures similar to those previously only obtained in thin films, for example less than about 0.4 microns. |
| 申请公布号 |
WO0126164(A2) |
申请公布日期 |
2001.04.12 |
| 申请号 |
WO2000US40388 |
申请日期 |
2000.07.14 |
| 申请人 |
AMERICAN SUPERCONDUCTOR CORPORATION |
发明人 |
ZHANG, WEI;LI, QI;RUPICH, MARTIN, W. |
| 分类号 |
B22F7/00;B22F7/02;B23K35/36;C30B5/00;C30B23/02;H01B12/06;H01B13/00;H01L39/14;H01L39/24 |
主分类号 |
B22F7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
