| 摘要 |
PURPOSE:To measure and control the mixed crystal ratio of a semiconductor of a multifactorial compd. by irradiating a light flux sent from a specified light source to plural particle beams, allowing it to absorb and measuring the extinction amount. CONSTITUTION:When the epitaxial growth is performed in an epitaxial apparatus using the particle beams, the light sent from the following high-stability xenon lamp 38 is converged with a lens 40 and irradiated to the particle beams which performs the light irradiation to the particle beams reaching a substrate and is a light source that is common in plural particle beams and has a continuous spectrum in an absorption wavelength region of those particle beams. The absorption of the light proportional to the intensities of the particle beams is caused in the wavelengths intrinsic to the elements of each particle beam and the absorbed light is separated into its spectral components with a spectroscope 42, and these are detected with the detector 46, 50 and inputted to the indication regulators 58, 62 via the amplified 52, 56. When the intensities of the particle beams are set to the prescribed values in the indication regulators 58, 62, the temp. of a heater for the particle beam source and a flow controller are regulated so that the intensities of the particle beams are made to the specified values.
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