发明名称 FORMING METHOD FOR RESIST PATTERN
摘要 PURPOSE:To form a resist pattern having small irregularity in size or shape of resist by detecting variation in conductivity of alkaline developer and determining a developing time when a predetermined circuit pattern is aligned on positive type photoresist and then alkaline-developed. CONSTITUTION:A substrate 1 is coated with positive type photoresist 2, a predetermined circuit pattern is aligned on the resist 2, and then alkaline-developed, variation in the conductivity of alkaline developer 3 is detected to determine a developing time. For example, the variation in the conductivity of the developer 3 during developing is measured as the change of a potential by electrodes 4, a voltmeter 5. As the electrodes 4, an electrode capable of measuring the potential of solution like a calomel electrode is employed. The change of the potential in this case depends upon the area of an exposed part 2a, a decrease of approx. several mV (when an applied voltage of a power source 6 is 1V) is observed, and its variation becomes as shown. A developing period of time is determined, for example, to time t2 by adding 10 sec to the time t1 in which the change of the potential is eliminated.
申请公布号 JPH02307215(A) 申请公布日期 1990.12.20
申请号 JP19890129756 申请日期 1989.05.22
申请人 MATSUSHITA ELECTRON CORP 发明人 FUKUMOTO HIROBUMI;TAKASHIMA YUKIO
分类号 G03F7/30;H01L21/027;H01L21/30 主分类号 G03F7/30
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