ALUMINUM NITRIDE-BASED SINTERED BODY HAVING METALLIZED METALLIC LAYER

摘要

PURPOSE:To enhance joining strength by incorporating the specified amount of crystal powder contg. erbium aluminate as a main component into W powder to form a metallized metallic layer and joining the layer to an AlN sintered body. CONSTITUTION:Paste for metallized metal is prepared by blending 5-20vol.% crystal powder contg. erbium aluminate of <=0.1mum particle diameter as a main component with W powder having 1.0-3.0mum particle diameter and adding an organic solvent to this blended material and kneading it. A package for housing a semiconductor element is constituted of a vessel 2 formed of both an insulated base body 1 consisting of an AlN-based sintered body and a cover body 2. In this case, a green sheet consists of AlN becoming the insulated base body 1 and a sintering adjuvant. This green sheet is printed and applied with the metallic paste and burned. A metallized metallic layer 5 is stuck and formed in the prescribed position of the insulated base body 1 made of the AlN-based sintered body. A semiconductor device is obtained by fitting a semiconductor element 4 to the bottom face of the recessed part of the insulated base body 1 and also connecting respective electrodes of the semiconductor element 4 to the metallized metallic layer 5 with a bonding wire 6.