| 摘要 |
PURPOSE:To easily obtain a diamond thin film having high performance in high reproducibility by forming a carbon-containing thin film on the surface of a substrate and subjecting the carbon-containing thin film to ion beam treatment. CONSTITUTION:A substrate 1 having a specific resistance of 10<-6> to 10<3>OMEGA.cm such as Si is placed in a methane/hydrogen mixture gas having a methane content of 1-100vol.%. The gas atmosphere is excited by electrical discharge by the application of RF (13.56 MHz) and a carbon-containing thin film 3 such as a diamond-like carbon having a film thickness of 50Angstrom to 10mum is formed on the surface of the substrate by an RF plasma CVD process, etc., under a pressure of 10<-6> to 10 Torr at 77K to 1100 deg.C. The substrate 1 holding the thin film 3 is introduced into a convergent ion beam apparatus and irradiated with an ion beam of e.g. Ga in the form of a line at an acceleration energy of 1-200 keV and an irradiation dose of 10<11> to 10<18>ions/cm<2> to form initial diamond nuclei at a generation density of 10<7> to 10<10>nuclei/cm<2> and, at the same time, form a carbide thin film pattern. A diamond thin film is deposited on the pattern 4. |
