| 摘要 |
<p>A high-frequency integrated circuit device which has a field effect transistor in a first area on the main surface of a semi-insulating semiconductor substrate and strip conductors in a second area on the main surface of the substrate, wherein the strip conductors are arranged in grooves provided in the second area on the main surface of the semi-insulating semiconductor substrate so as to reduce the device size while maintaining sufficient mechanical strenght.</p> |
