| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the process reproducibility and reliability of the connection of power lines to other wiring layers of a semiconductor storage device at periphery circuit regions; the power lines being connected to channel layers of thin film transistors. SOLUTION: The device comprises first contact holes 28 exposing active regions 24 formed in a substrate 1 through a first insulation layer 22, insulation film 30 formed on the first insulation layer 22 and in the contact holes 28, second contact holes 18 exposing the active regions 24 through the insulation film 30 in the first contact holes 28 and third contact holes exposing the active regions through the second and first insulation layers 20, 22 on the insulation film 30. Power lines 4 running on the insulation film 30 contact the active regions 24 through the second contact holes 18 and wiring layer 2 on the second insulation layer 20 contacts the active regions 24 through the third contact holes.</p> |
