| 摘要 |
PURPOSE: A plasma cleaning is provided, which can remove effectively polymer-based residues of a side wall of reactor generating at the etching process by using waferless auto cleaning. Also it can prevent more polymer-base residues generating at the etching process by pollution of bare wafer because bare wafer is not used. CONSTITUTION: The plasma cleaning is characterized by containing the steps of; (1) pouring the cleaning gas into the plasma reactor after removing the wafer; (2) forming plasma cleaning gas by activating the cleaning gas; and (3) removing the polymer-based residues by using the plasma cleaning gas in the plasma reactor remained polymer-based residues after wafer etching.
|
