| 发明名称 |
Method and apparatus for manufacturing a semiconductor device |
| 摘要 |
In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
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| 申请公布号 |
US2002111040(A1) |
申请公布日期 |
2002.08.15 |
| 申请号 |
US20010037865 |
申请日期 |
2001.10.24 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPANESE CORPORATION |
发明人 |
YAMAZAKI SHUNPEI;SAKAMA MITSUNORI;FUKADA TAKESHI |
| 分类号 |
H01L21/205;C23C16/40;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/205 |
| 代理机构 |
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